Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals

摘要

Preliminary results of numerical simulations of electron and positronchanneling and emission spectra are reported for straight, uniformly bent andperiodically bent silicon crystal. The projectile trajectories are computedusing the newly developed module [1] of the MBN Explorer package [2,3]. Theelectron and positron channeling along Si(110) and Si(111) crystallographicplanes are studied for the projectile energies 195--855 MeV.